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Type : JFET, Bipolar Junction Transistor, IGBT Transistor
Operating Temperature : /
Series : standard
Mounting Type : /
Description : /
Model Number : MBT3906DW1T1G
Place of Origin : Guangdong, China
Brand Name : original
D/C : 22+
Package Type : Surface Mount
Application : na
Supplier Type : Other
Cross Reference : /
Media Available : Other
Brand : /
Current - Collector (Ic) (Max) : /
Voltage - Collector Emitter Breakdown (Max) : /
Vce Saturation (Max) @ Ib, Ic : /
Current - Collector Cutoff (Max) : /
DC Current Gain (hFE) (Min) @ Ic, Vce : /
Power - Max : /
Frequency - Transition : /
Package / Case : /
Resistor - Base (R1) : /
Resistor - Emitter Base (R2) : /
FET Type : /
FET Feature : /
Drain to Source Voltage (Vdss) : /
Current - Continuous Drain (Id) @ 25°C : /
Rds On (Max) @ Id, Vgs : /
Vgs(th) (Max) @ Id : /
Gate Charge (Qg) (Max) @ Vgs : /
Input Capacitance (Ciss) (Max) @ Vds : /
Frequency : /
Current Rating (Amps) : /
Noise Figure : /
Power - Output : /
Voltage - Rated : /
Drive Voltage (Max Rds On, Min Rds On) : /
Vgs (Max) : /
IGBT Type : /
Configuration : /
Vce(on) (Max) @ Vge, Ic : /
Input Capacitance (Cies) @ Vce : /
Input : /
NTC Thermistor : /
Voltage - Breakdown (V(BR)GSS) : /
Current - Drain (Idss) @ Vds (Vgs=0) : /
Current Drain (Id) - Max : /
Voltage - Cutoff (VGS off) @ Id : /
Resistance - RDS(On) : /
Voltage : /
Voltage - Output : /
Voltage - Offset (Vt) : /
Current - Gate to Anode Leakage (Igao) : /
Current - Valley (Iv) : /
Current - Peak : /
Applications : /
Transistor Type : mrf150 rf power transistor
Packaging Details : Anti-static packaging
Port : shenzhen
Supply Ability : 10000 Piece/Pieces per Week
MOQ : 10 pieces
Price : $1.00/pieces >=10 pieces

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